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| Si7356DP New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES D Ultra-Low On-Resistance Using High Density TrenchFETr Gen II Power MOSFET Technology D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.003 @ VGS = 10 V 0.004 @ VGS = 4.5 V ID (A) 30 27 APPLICATIONS D Low-Side DC/DC Conversion - Notebook - Server - Workstation D Point-of-Load Conversion PowerPAK SO-8 6.15 mm S 1 2 S 3 S 5.15 mm D 4 D 8 7 D 6 D 5 D G G S N-Channel MOSFET Bottom View Ordering Information: SI7356DP-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs 30 "20 30 25 70 4.5 5.4 3.4 Steady State Unit V 18 15 A 1.8 1.9 1.2 - 55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72222 S-32039--Rev. B, 13-Oct-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 18 50 1.0 Maximum 23 65 1.5 Unit _C/W C/W 1 Si7356DP Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain CurrentNO TAG Drain-Source On-State ResistanceNO TAG Forward TransconductanceNO TAG Diode Forward VoltageNO TAG VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 25 A VGS = 4.5 V, ID = 19 A VDS = 15 V, ID = 25 A IS = 2.9 A, VGS = 0 V 30 0.0024 0.0032 110 0.72 1.1 0.003 0.004 1.0 3.0 "100 1 5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit DynamicNO TAG Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd RG td(on) tr td(off) tf trr IF = 2.9 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W VDS = 15 V, VGS = 4.5 V, ID = 20 A 45 20 16 1.1 27 21 107 43 45 40 35 160 65 70 ns W 70 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 60 50 40 30 20 10 Output Characteristics VGS = 10 thru 4 V 60 50 40 30 20 Transfer Characteristics I D - Drain Current (A) I D - Drain Current (A) TC = 125_C 10 25_C - 55_C 3V 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) www.vishay.com 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS - Gate-to-Source Voltage (V) Document Number: 72222 S-32039--Rev. B, 13-Oct-03 2 Si7356DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.005 Vishay Siliconix On-Resistance vs. Drain Current 8500 Capacitance r DS(on) - On-Resistance ( W ) 0.004 C - Capacitance (pF) VGS = 4.5 V 0.003 VGS = 10 V 0.002 6800 Ciss 5100 3400 0.001 1700 Crss Coss 0.000 0 10 20 30 40 50 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 6 V GS - Gate-to-Source Voltage (V) 5 4 3 2 1 0 0 10 20 VDS = 15 V ID = 20 A Gate Charge 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 25 A r DS(on) - On-Resistance (W) (Normalized) 1.4 1.2 1.0 0.8 30 40 50 60 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 50 0.015 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) 10 TJ = 150_C r DS(on) - On-Resistance ( W ) 0.012 ID = 25 A 0.009 1 TJ = 25_C 0.006 0.003 0.1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) Document Number: 72222 S-32039--Rev. B, 13-Oct-03 0.000 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si7356DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.2 V GS(th) Variance (V) - 0.0 - 0.2 - 0.4 - 0.6 - 0.8 - 1.0 - 50 40 Power (W) 120 ID = 250 mA 200 Single Pulse Power 160 80 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (sec) 1 10 TJ - Temperature (_C) 100 Safe Operating Area, Junction-to-Case Limited by rDS(on) 10 1 ms 10 ms 1 100 ms 1s 0.1 10 s TC = 25_C Single Pulse dc 0.01 10 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 50_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 72222 S-32039--Rev. B, 13-Oct-03 Si7356DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Vishay Siliconix Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72222 S-32039--Rev. B, 13-Oct-03 www.vishay.com 5 |
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